CK100 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CK100

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO39

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CK100 datasheet

 ..1. Size:224K  cdil
 cl100 ck100 a b.pdf pdf_icon

CK100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CL100, A, B NPN CK100, A, B PNP TO-39 Metal Can Package Medium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 50 V VCBO Co

 0.1. Size:221K  cdil
 cl100s ck100s.pdf pdf_icon

CK100

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR TRANSISTORS CL100S NPN CK100S PNP TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5.0 V Collector Current ICM 1.0 A Power Dissipation @ Ta=25 deg C PD 800 mW De

 0.2. Size:192K  china
 3ck100.pdf pdf_icon

CK100

3CK100 PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 25 50 100 150 200 250 V V(BR)CEO ICE=5mA 25 50 100 150 200 250 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA

Otros transistores... CJD340, CJD350, CJD41C, CJD42C, CJD44H11, CJD45H11, CJD47, CJD50, MPSA42, CK13, CK13A, CK14, CK14A, CK150, CK16, CK16A, CK17