All Transistors. CK100 Datasheet

 

CK100 Datasheet and Replacement


   Type Designator: CK100
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO39
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CK100 Datasheet (PDF)

 ..1. Size:224K  cdil
 cl100 ck100 a b.pdf pdf_icon

CK100

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR POWER TRANSISTORS CL100, A, B NPNCK100, A, B PNPTO-39Metal Can PackageMedium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCERCollector Emitter Voltage 50 VVCBOCo

 0.1. Size:221K  cdil
 cl100s ck100s.pdf pdf_icon

CK100

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR TRANSISTORS CL100S NPNCK100S PNPTO-39ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 50 VCollector -Base Voltage VCBO 60 VEmitter Base Voltage VEBO 5.0 VCollector Current ICM 1.0 APower Dissipation @ Ta=25 deg C PD 800 mWDe

 0.2. Size:192K  china
 3ck100.pdf pdf_icon

CK100

3CK100 PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 25 50 100 150 200 250 V V(BR)CEO ICE=5mA 25 50 100 150 200 250 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC640-016G | OC4435 | 2N5884 | BC139 | 2N5884G | 2SC815 | BC640-6

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