2N34 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N3442/DSEMICONDUCTOR TECHNICAL DATA2N3442High-Power IndustrialTransistors10 AMPERENPN silicon power transistor designed for applications in industrial and commercialPOWER TRANSISTORequipment including high fidelity audio amplifiers, series and shunt regulators andNPN SILICONpower switches.140 VOLTS Collector Emitter Sustaining Vol

2N34392N3440SILICON NPN TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTORDESCRIPTION The 2N3439 and 2N3440 are silicon epitaxialplanar NPN transistors in jedec TO-39 metal casedesigned for use in consumer and industrialline-operated applications. These devices are particularly suited as drivers inhigh-voltage low current inverters, switching andseri

2N34392N3440SILICON NPN TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTORDESCRIPTION The 2N3439 and 2N3440 are silicon epitaxialplanar NPN transistors in jedec TO-39 metal casedesigned for use in consumer and industrialline-operated applications. These devices are particularly suited as drivers inhigh-voltage low current inverters, switching andseri

2N34162N3417B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 V

2N3415B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 25 VCEOV Collector-Base Voltage 25 VCBOV

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi

2N3442High-Power IndustrialTransistorsNPN silicon power transistor designed for applications in industrialand commercial equipment including high fidelity audio amplifiers,series and shunt regulators and power switches.http://onsemi.comFeatures10 AMPERE Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)POWER TRANSISTOR Excellent Second Breakdown Capabi

2N34422N4347HIGH POWER INDUSTRIAL TRANSISTORSHIGH POWER INDUSTRIAL TRANSISTORSNPN silicon transistors designed for applications in industrial and commercial equipment including highfidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta

AAA

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

2N3420SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

2N3420LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 60V 5.08 (0.200)IC = 5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can b

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

2N3421SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

2N3441SEMELABMECHANICAL DATADimensions in mm (inches)MEDIUM POWERSILICON NPN 6.35 (0.250)8.64 (0.340)3.68(0.145) rad.TRANSISTOR3.61 (0.142)max.3.86 (0.145)rad.FEATURES Low Saturation Voltages High Voltage Ratings Maximum SafeOperatingAreaCurves for DC and Pulse Operation.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

2N3420SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N3421SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439C3A / 2N3440C3A 2N3439C3B / 2N3440C3B 2N3439C3C / 2N3440C3C High Voltage Hermetic Ceramic Surface Mount Package. Variant B to MIL-PRF-19500/368 outline Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA =

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3439CSM4 / 2N3439CSM4R 2N3440CSM4 / 2N3440CSM4R High Voltage Hermetic Ceramic Surface Mount Package. Ideally suited for drivers in high-voltage low current inverters, switching and series regulators. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) 2N3439 2N3440Symbols Parame

2N3439DCSM2N3440DCSMHIGH VOLTAGE, MEDIUM POWER, NPNDUAL TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES2.29 0.20 1.65 0.13 1.40 0.15(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR2 3 HERMETIC CERAMIC SURFACE

2N3447Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3421ASMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N3445Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 7.5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

2N3421ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

2N3439DCSM2N3440DCSMHIGH VOLTAGE, MEDIUM POWER, NPNDUAL TRANSISTOR IN AHERMETICALLY SEALEDMECHANICAL DATACERAMIC SURFACE MOUNT PACKAGEDimensions in mm (inches)FOR HIGH RELIABILITY APPLICATIONSFEATURES2.29 0.20 1.65 0.13 1.40 0.15(0.055 0.006)(0.09 0.008) (0.065 0.005) DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR2 3 HERMETIC CERAMIC SURFACE

IS / IECQC 700000IS/ISO 9002IS / IECQC 750100Lic# QSC/L- 000019.2Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerNPN SILICON PLANAR TRANSISTOR 2N3478TO-72Boca Semiconductor Corp. BSCVHF/UHF ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 30 VCollector -Emitter Voltage VCEO 15 VEmitter Base

Continental Device India LimitedQAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N34962N3497TO-18Metal Can PackageGeneral Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N3496 2N3497

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS2N3499 2N3501VCEOCollector Emitter Voltage 100 150 VVCBOCollector Base Voltage 100

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3419APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3420APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 85V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 85JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dis

2N3439 thru 2N3440 Qualified Levels: NPN LOW POWER SILICON JAN, JANTX, Available on TRANSISTOR JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers nume

TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VE

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440JANTX 2N3439L * 2N3440LJANTXV

TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level JAN 2N3467 2N3468 JANTX 2N3467L 2N3468L JANTXV MAXIMUM RATINGS 2N3467 2N3468 Ratings Symbol Unit 2N3467L 2N3468L Collector-Emitter Voltage 40 50 Vdc VCEO TO-39* (TO-205AD) Collector-Base Voltage 40 50 Vdc VCBO 2N3467, 2N3468 Emitter-Base Voltage 5.0 Vdc

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3421APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power D

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3418APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 85V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 85VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Di

TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level JAN 2N3467 2N3468 JANTX 2N3467L 2N3468L JANTXV MAXIMUM RATINGS 2N3467 2N3468 Ratings Symbol Unit 2N3467L 2N3468L Collector-Emitter Voltage 40 50 Vdc VCEO TO-39* (TO-205AD) Collector-Base Voltage 40 50 Vdc VCBO 2N3467, 2N3468 Emitter-Base Voltage 5.0 Vdc

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS JAN 2N3439 * 2N3440JANTX 2N3439L * 2N3440LJANTXV

Data Sheet No. 2N3468Generic Part Number:Type 2N34682N3468Geometry 6706Polarity PNPREF: MIL-PRF-19500/348Qual Level: JAN - JANTXVFeatures: General-purpose transistor forswitching and amplifier applica-tons. Housed in a TO-39 case. Also available in chip form usingthe 6706 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/348 whichSemi

Data Sheet No. 2N3498Generic Part Number:Type 2N34982N3498Geometry 5620Polarity NPNREF: MIL-PRF-19500/366Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 5620 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/366 whic

Data Sheet No. 2N3486AGeneric Part Number:Type 2N3486A2N3486AGeometry 0600Polarity PNPREF: MIL-PRF-19500/392Qual Level: JAN - JANTXVFeatures: General-purpose transistor forswitching and amplifier applica-tons. Housed in a TO-46 case. Also available in chip form usingthe 0600 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/392 whichS

Data Sheet No. 2N3467Generic Part Number:Type 2N34672N3467Geometry 6706Polarity PNPREF: MIL-PRF-19500/348Qual Level: JAN - JANTXVFeatures: General-purpose transistor forswitching and amplifier applica-tons. Housed in a TO-39 case. Also available in chip form usingthe 6706 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/348 whichSemi

Data Sheet No. 2N3485AGeneric Part Number:Type 2N3485A2N3485AGeometry 0600Polarity PNPREF: MIL-PRF-19500/392Qual Level: JAN - JANTXVFeatures: General-purpose transistor forswitching and amplifier applica-tons. Housed in a TO-46 case. Also available in chip form usingthe 0600 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/392 whichS

NPN Meduim Power Silicon Transistor2N3418, 2N3419, 2N3420 & 2N34212N3418S, 2N3419S, 2N3420S & 2N3421SFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/393 TO-5, TO-39 (TO-205AD) PackageMaximum Ratings 2N3418, S 2N3419, SRatings Symbol 2N3420, S 2N3421, S UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3448 DESCRIPTION With TO-3 package Excellent Safe Operating Area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3441 DESCRIPTION With TO-66 package Continuous collector current-IC=3A Power dissipation -PD=25W @TC=25 APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: Driver for high power outputs Series and shunt regulators Audio and servo amplifiers

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3440DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250 V(Min)CEO(SUS)DC Current Gain-: h = 40(Min) @ I = 20mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3442 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3447 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER CON

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3445 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3446 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS Designed for medium-switching and amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDI