D1666 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: D1666  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 12 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 500 MHz

Capacitancia de salida (Cc): 1.5 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO92

  📄📄 Copiar 

 Búsqueda de reemplazo de D1666

- Selecciónⓘ de transistores por parámetros

 

D1666 datasheet

 0.1. Size:30K  sanyo
 2sb1133 2sd1666.pdf pdf_icon

D1666

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7

 0.2. Size:214K  inchange semiconductor
 2sd1666.pdf pdf_icon

D1666

isc Silicon NPN Power Transistor 2SD1666 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI

Otros transistores... D11E406, D11E407, D12E026, D12E109, D12E126, D12X043, D12X047, D150, MJE340, D16E7, D16E9, D16G6, D16K1, D16K2, D16K3, D16K4, D16P1