D1666 Datasheet. Specs and Replacement

Type Designator: D1666  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

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D1666 datasheet

 0.1. Size:30K  sanyo

 2sb1133 2sd1666.pdf pdf_icon

D1666

Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7... See More ⇒

 0.2. Size:214K  inchange semiconductor

 2sd1666.pdf pdf_icon

D1666

isc Silicon NPN Power Transistor 2SD1666 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI... See More ⇒

Detailed specifications: D11E406, D11E407, D12E026, D12E109, D12E126, D12X043, D12X047, D150, MJE340, D16E7, D16E9, D16G6, D16K1, D16K2, D16K3, D16K4, D16P1

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