All Transistors. D1666 Datasheet

 

D1666 Datasheet and Replacement


   Type Designator: D1666
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 1.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 

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D1666 Datasheet (PDF)

 0.1. Size:30K  sanyo
 2sb1133 2sd1666.pdf pdf_icon

D1666

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

 0.2. Size:214K  inchange semiconductor
 2sd1666.pdf pdf_icon

D1666

isc Silicon NPN Power Transistor 2SD1666DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

Datasheet: D11E406 , D11E407 , D12E026 , D12E109 , D12E126 , D12X043 , D12X047 , D150 , 2SA1837 , D16E7 , D16E9 , D16G6 , D16K1 , D16K2 , D16K3 , D16K4 , D16P1 .

History: 2SC5489 | KRA317V | 2SC1187 | CS9018D | L9014RLT3G | CS9020G | DXT2907A

Keywords - D1666 transistor datasheet

 D1666 cross reference
 D1666 equivalent finder
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