D45C12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45C12
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 125 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TOP66
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D45C12 Datasheet (PDF)
d45c12 d44c12.pdf
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D45C12 (PNP),D44C12 (NPN)Complementary SiliconPower TransistorThe D45C12 and D44C12 are for general purpose driver ormedium power output stages in CW or switching applications. http://onsemi.comFeatures4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max)SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80
d45c11.pdf
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January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo
Otros transistores... D44VM6 , D44VM7 , D44VM8 , D44VM9 , D45C , D45C1 , D45C10 , D45C11 , 13007 , D45C2 , D45C3 , D45C4 , D45C5 , D45C6 , D45C7 , D45C8 , D45C9 .