D45C12 Datasheet, Equivalent, Cross Reference Search
Type Designator: D45C12
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TOP66
D45C12 Transistor Equivalent Substitute - Cross-Reference Search
D45C12 Datasheet (PDF)
d45c12 d44c12.pdf
D45C12 (PNP),D44C12 (NPN)Complementary SiliconPower TransistorThe D45C12 and D44C12 are for general purpose driver ormedium power output stages in CW or switching applications. http://onsemi.comFeatures4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max)SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80
d45c11.pdf
January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
