D45C12 Specs and Replacement

Type Designator: D45C12

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TOP66

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D45C12 datasheet

 ..1. Size:73K  onsemi

 d45c12 d44c12.pdf pdf_icon

D45C12

D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http //onsemi.com Features 4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80... See More ⇒

 9.1. Size:95K  fairchild semi

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D45C12

January 2010 D45C11 PNP Current Driver Transistor Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Vo... See More ⇒

Detailed specifications: D44VM6, D44VM7, D44VM8, D44VM9, D45C, D45C1, D45C10, D45C11, BC548, D45C2, D45C3, D45C4, D45C5, D45C6, D45C7, D45C8, D45C9

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