D45C8 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: D45C8

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 125 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TOP66

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D45C8 datasheet

 ..1. Size:138K  fairchild semi
 d45c8.pdf pdf_icon

D45C8

January 2010 D45C8 PNP Power Amplifier Sourced from process 5P. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -60 V IC Collector Current - Continuous -4.0 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C Electrical Characteristics TA=25 C

 ..2. Size:134K  inchange semiconductor
 d45c8.pdf pdf_icon

D45C8

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFE Fast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0

Otros transistores... D45C11, D45C12, D45C2, D45C3, D45C4, D45C5, D45C6, D45C7, A1015, D45C9, D45D, D45D1, D45D2, D45D3, D45D4, D45D5, D45D6