D45C8 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45C8
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 125 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TOP66
Búsqueda de reemplazo de transistor bipolar D45C8
D45C8 Datasheet (PDF)
d45c8.pdf
January 2010D45C8PNP Power Amplifier Sourced from process 5P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current - Continuous -4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C
d45c8.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFEFast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BD543A | BD436-10 | 2SD2696 | FMBS5551
History: BD543A | BD436-10 | 2SD2696 | FMBS5551
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050