D45C8 Datasheet, Equivalent, Cross Reference Search
Type Designator: D45C8
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TOP66
D45C8 Transistor Equivalent Substitute - Cross-Reference Search
D45C8 Datasheet (PDF)
d45c8.pdf
January 2010D45C8PNP Power Amplifier Sourced from process 5P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current - Continuous -4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C
d45c8.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFEFast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
