D45C8 Specs and Replacement
Type Designator: D45C8
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TOP66
D45C8 Substitution
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D45C8 datasheet
January 2010 D45C8 PNP Power Amplifier Sourced from process 5P. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -60 V IC Collector Current - Continuous -4.0 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C Electrical Characteristics TA=25 C ... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFE Fast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0... See More ⇒
Detailed specifications: D45C11, D45C12, D45C2, D45C3, D45C4, D45C5, D45C6, D45C7, A1015, D45C9, D45D, D45D1, D45D2, D45D3, D45D4, D45D5, D45D6
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