DTC123EET1G Todos los transistores

 

DTC123EET1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DTC123EET1G
   Código: 8H
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: SOT-416
 

 Búsqueda de reemplazo de DTC123EET1G

   - Selección ⓘ de transistores por parámetros

 

DTC123EET1G Datasheet (PDF)

 ..1. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf pdf_icon

DTC123EET1G

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.1. Size:139K  nxp
pdtc123eef pdtc123ek pdtc123es.pdf pdf_icon

DTC123EET1G

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.2. Size:68K  rohm
dtc123ee-eua-eka 22 sot416 323 346.pdf pdf_icon

DTC123EET1G

TransistorsDigital transistors (built-in resistors)DTC123EE / DTC123EUA / DTC123EKADTC123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 6.3. Size:685K  rohm
dtc123ee.pdf pdf_icon

DTC123EET1G

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.) GND 100mAGND R12.2kWDTC123EM DTC123EE R2(SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3OUT OUT lFeaturesIN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW.IN GND GND 2) Built-in bias resi

Otros transistores... DTA143XKA , DTA143XSA , DTA143XUA , DTC123EKAFRA , DTA143ZKA , DTA143ZSA , DTA143ZUA , DTA144ECA , 2SC5198 , DTA144EKA , DTA144ESA , DTA144EUA , DTA144GKA , DTC123EEFRA , DTA144TCA , DTC123ECA , DTA144TKA .

History: HA7730

 

 
Back to Top

 


 
.