DTC123EET1G Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC123EET1G
SMD Transistor Code: 8H
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: SOT-416
DTC123EET1G Transistor Equivalent Substitute - Cross-Reference Search
DTC123EET1G Datasheet (PDF)
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dtc123ee.pdf
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ddtc123ee.pdf
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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FMMT4126 | DTC114EA3 | 2SC366 | DTC114EUB | 2SC2813Q5
History: FMMT4126 | DTC114EA3 | 2SC366 | DTC114EUB | 2SC2813Q5
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