Справочник транзисторов. DTC123EET1G

 

Биполярный транзистор DTC123EET1G Даташит. Аналоги


   Наименование производителя: DTC123EET1G
   Маркировка: 8H
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 2.2 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: SOT-416
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DTC123EET1G Datasheet (PDF)

 ..1. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdfpdf_icon

DTC123EET1G

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.1. Size:139K  nxp
pdtc123eef pdtc123ek pdtc123es.pdfpdf_icon

DTC123EET1G

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.2. Size:68K  rohm
dtc123ee-eua-eka 22 sot416 323 346.pdfpdf_icon

DTC123EET1G

TransistorsDigital transistors (built-in resistors)DTC123EE / DTC123EUA / DTC123EKADTC123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 6.3. Size:685K  rohm
dtc123ee.pdfpdf_icon

DTC123EET1G

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.) GND 100mAGND R12.2kWDTC123EM DTC123EE R2(SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3OUT OUT lFeaturesIN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW.IN GND GND 2) Built-in bias resi

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N401

 

 
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