DTC123EEFRA Datasheet. Equivalente

 ..1. Size:2061K  rohm
 dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdf

DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC 50V IC(MAX.) 100mA R1 2.2k DTC123EM DTC123EE DTC123EMFHA DTC123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k

 5.1. Size:139K  nxp
 pdtc123eef pdtc123ek pdtc123es.pdf

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:68K  rohm
 dtc123ee-eua-eka 22 sot416 323 346.pdf

Transistors Digital transistors (built-in resistors) DTC123EE / DTC123EUA / DTC123EKA DTC123ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias

 6.2. Size:685K  rohm
 dtc123ee.pdf

DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2kW DTC123EM DTC123EE R2 (SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3 OUT OUT lFeatures IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW. IN GND GND 2) Built-in bias resi

 6.3. Size:545K  diodes
 ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 6.4. Size:352K  diodes
 ddtc123ee.pdf

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 6.5. Size:144K  onsemi
 dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

 6.6. Size:389K  onsemi
 mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 6.7. Size:130K  chenmko
 chdtc123eegp.pdf

CHENMKO ENTERPRISE CO.,LTD CHDTC123EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation