All Transistors. DTC123EEFRA Datasheet

 

DTC123EEFRA Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTC123EEFRA
   SMD Transistor Code: 22
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT-416

 DTC123EEFRA Transistor Equivalent Substitute - Cross-Reference Search

   

DTC123EEFRA Datasheet (PDF)

 ..1. Size:2061K  rohm
dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdf

DTC123EEFRA
DTC123EEFRA

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC50VIC(MAX.)100mA R12.2kDTC123EM DTC123EEDTC123EMFHA DTC123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k

 5.1. Size:139K  nxp
pdtc123eef pdtc123ek pdtc123es.pdf

DTC123EEFRA
DTC123EEFRA

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:68K  rohm
dtc123ee-eua-eka 22 sot416 323 346.pdf

DTC123EEFRA
DTC123EEFRA

TransistorsDigital transistors (built-in resistors)DTC123EE / DTC123EUA / DTC123EKADTC123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

 6.2. Size:685K  rohm
dtc123ee.pdf

DTC123EEFRA
DTC123EEFRA

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.) GND 100mAGND R12.2kWDTC123EM DTC123EE R2(SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3OUT OUT lFeaturesIN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW.IN GND GND 2) Built-in bias resi

 6.3. Size:545K  diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DTC123EEFRA
DTC123EEFRA

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 6.4. Size:352K  diodes
ddtc123ee.pdf

DTC123EEFRA
DTC123EEFRA

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 6.5. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC123EEFRA
DTC123EEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.6. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf

DTC123EEFRA
DTC123EEFRA

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 6.7. Size:130K  chenmko
chdtc123eegp.pdf

DTC123EEFRA
DTC123EEFRA

CHENMKO ENTERPRISE CO.,LTDCHDTC123EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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