1401 Datasheet. Equivalente

 0.1. Size:135K  toshiba
 rn1401-rn1406.pdf

RN1401,RN1402,RN1403,RN1404,RN1405,RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401,RN1402,RN1403 RN1404,RN1405,RN1406 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 RN2406

 0.2. Size:580K  toshiba
 rn1401 rn1402 rn1403 rn1404 rn1405 rn1406.pdf

RN1401 RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir

 0.3. Size:43K  sanyo
 2sd1401.pdf

 0.4. Size:259K  vishay
 si1401edh.pdf

New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V - 12 14.1 nC 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 Compl

 0.5. Size:308K  onsemi
 bd13610stu bd13610s bd13616stu bd13616s bd13810stu bd13816stu bd14010stu bd14016stu bd14016s.pdf

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO V BD136 -45 BD138 -60 TO-126 BD140 -80 CASE 340AS 1 2 3 Collector-Emitter Voltage VCEO V

 0.6. Size:557K  panasonic
 dmg21401.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). DMG21401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Package Features Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1 Emitter (

 0.7. Size:29K  hitachi
 2sb1401.pdf

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VE

 0.8. Size:49K  hitachi
 2sk1401 2sk1401a.pdf

2SK1401, 2SK1401A Silicon N-Channel MOS FET ADE-208-1281 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1401, 2SK1401A Absol

 0.9. Size:144K  aosemi
 aol1401.pdf

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON)

 0.10. Size:254K  sino
 sm1401pss.pdf

SM1401PSS P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-2.8A, D RDS(ON)= 92m (Max.) @ VGS=-4.5V S RDS(ON)= 135m (Max.) @ VGS=-2.5V G RDS(ON)= 220m (Max.) @ VGS=-1.8V Top View of SC-70 Super High Dense Cell Design Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Portabl

 0.11. Size:1065K  magnachip
 mdu1401svrh.pdf

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChip s MOSFET V = 25V DS Technology, which provides high performance in on-state I = 100A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1401S is suitable device

 0.12. Size:1302K  elm
 elm51401fa.pdf

Single P-channel MOSFET ELM51401FA-S General description Features ELM51401FA-S uses advanced trench technology Vds=-20V to provide excellent Rds(on), low gate charge and Id=-1.0A operation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limi

 0.13. Size:1052K  cn vgsemi
 vs1401ath.pdf

VS1401ATH 100V/130A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 4.5 m Enhancement mode I D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 V I D(Package Limited) 130 A 100% Avalanche test TO-220AB Part ID Package Type Marking Packing VS1401ATH TO-220AB 1401ATH 50pcs/Tube Maximum ratings, at TA =25 C, unless otherwise spe

 0.14. Size:203K  inchange semiconductor
 2sk1401a.pdf

isc N-Channel MOSFET Transistor 2SK1401A DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 0.15. Size:207K  inchange semiconductor
 2sk1401.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain