1401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RN1401,RN1402,RN1403,RN1404,RN1405,RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401,RN1402,RN1403 RN1404,RN1405,RN1406 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401~RN2406

RN1401RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir

New ProductSi1401EDHVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V- 12 14.1 nC 100 % Rg Tested0.070 at VGS = - 1.8 V - 4 Compl

PNP Epitaxial SiliconTransistorBD136 SeriesBD136 / BD138 / BD140Applicationswww.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free DevicesABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Max UnitCollector-Base Voltage VCBO VBD136 -45BD138 -60TO-126BD140 -80CASE 340AS1 2 3Collector-Emitter Voltage VCEO V

This product complies with the RoHS Directive (EU 2002/95/EC).DMG21401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Package Features Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (

2SB1401Silicon PNP Triple DiffusedADE-208-875 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 55 k3(Typ)32SB1401Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VE

2SK1401, 2SK1401ASilicon N-Channel MOS FETADE-208-1281 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1401, 2SK1401AAbsol

AOL1401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38Vcharge with a 25V gate rating. This device is suitable ID = -85Afor use as a load switch or in PWM applications. It is RDS(ON)

SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 100A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1401S is suitable device

Single P-channel MOSFETELM51401FA-SGeneral description Features ELM51401FA-S uses advanced trench technology Vds=-20Vto provide excellent Rds(on), low gate charge and Id=-1.0Aoperation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V)Maximum absolute ratingsParameter Symbol Limi

VS1401ATH100V/130A N-Channel Advanced Power MOSFETV DS 100 VFeaturesR DS(on),TYP@ VGS=10 V 4.5 m Enhancement modeI D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 VI D(Package Limited) 130 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS1401ATH TO-220AB 1401ATH 50pcs/TubeMaximum ratings, at TA =25C, unless otherwise spe

isc N-Channel MOSFET Transistor 2SK1401ADESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain