1401 Todos los transistores

RN1401,RN1402,RN1403,RN1404,RN1405,RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401,RN1402,RN1403 RN1404,RN1405,RN1406 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 RN2406 ... See More ⇒

RN1401 RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir... See More ⇒

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New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V - 12 14.1 nC 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 Compl... See More ⇒

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO V BD136 -45 BD138 -60 TO-126 BD140 -80 CASE 340AS 1 2 3 Collector-Emitter Voltage VCEO V... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DMG21401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Package Features Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1 Emitter (... See More ⇒

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VE... See More ⇒

2SK1401, 2SK1401A Silicon N-Channel MOS FET ADE-208-1281 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1401, 2SK1401A Absol... See More ⇒

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON) ... See More ⇒

SM1401PSS P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-2.8A, D RDS(ON)= 92m (Max.) @ VGS=-4.5V S RDS(ON)= 135m (Max.) @ VGS=-2.5V G RDS(ON)= 220m (Max.) @ VGS=-1.8V Top View of SC-70 Super High Dense Cell Design Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Portabl... See More ⇒

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChip s MOSFET V = 25V DS Technology, which provides high performance in on-state I = 100A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1401S is suitable device... See More ⇒

Single P-channel MOSFET ELM51401FA-S General description Features ELM51401FA-S uses advanced trench technology Vds=-20V to provide excellent Rds(on), low gate charge and Id=-1.0A operation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limi... See More ⇒

VS1401ATH 100V/130A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 4.5 m Enhancement mode I D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 V I D(Package Limited) 130 A 100% Avalanche test TO-220AB Part ID Package Type Marking Packing VS1401ATH TO-220AB 1401ATH 50pcs/Tube Maximum ratings, at TA =25 C, unless otherwise spe... See More ⇒

isc N-Channel MOSFET Transistor 2SK1401A DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) ... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain... See More ⇒