1401 - описание и поиск аналогов

RN1401,RN1402,RN1403,RN1404,RN1405,RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401,RN1402,RN1403 RN1404,RN1405,RN1406 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 RN2406

RN1401 RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir

New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 TrenchFET Power MOSFET 0.046 at VGS = - 2.5 V - 4 Typical ESD Performance 1500 V - 12 14.1 nC 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 Compl

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are Pb-Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO V BD136 -45 BD138 -60 TO-126 BD140 -80 CASE 340AS 1 2 3 Collector-Emitter Voltage VCEO V

This product complies with the RoHS Directive (EU 2002/95/EC). DMG21401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Package Features Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1 Emitter (

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VE

2SK1401, 2SK1401A Silicon N-Channel MOS FET ADE-208-1281 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1401, 2SK1401A Absol

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON)

SM1401PSS P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-2.8A, D RDS(ON)= 92m (Max.) @ VGS=-4.5V S RDS(ON)= 135m (Max.) @ VGS=-2.5V G RDS(ON)= 220m (Max.) @ VGS=-1.8V Top View of SC-70 Super High Dense Cell Design Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Portabl

Preliminary Subject to Change without Notice 7.9 MDU1401S Single N-channel Trench MOSFET 25V General Description Features The MDU1401S uses advanced MagnaChip s MOSFET V = 25V DS Technology, which provides high performance in on-state I = 100A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1401S is suitable device

Single P-channel MOSFET ELM51401FA-S General description Features ELM51401FA-S uses advanced trench technology Vds=-20V to provide excellent Rds(on), low gate charge and Id=-1.0A operation with gate voltages as low as 1.8V. Rds(on) = 600m (Vgs=-4.5V) Rds(on) = 800m (Vgs=-2.5V) Rds(on) = 1300m (Vgs=-1.8V) Maximum absolute ratings Parameter Symbol Limi

VS1401ATH 100V/130A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 4.5 m Enhancement mode I D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 V I D(Package Limited) 130 A 100% Avalanche test TO-220AB Part ID Package Type Marking Packing VS1401ATH TO-220AB 1401ATH 50pcs/Tube Maximum ratings, at TA =25 C, unless otherwise spe

isc N-Channel MOSFET Transistor 2SK1401A DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain