DTB113EK
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB113EK
Código: F11
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 10
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta:
SC59
SOT346
Búsqueda de reemplazo de transistor bipolar DTB113EK
DTB113EK
Datasheet (PDF)
..1. Size:311K rohm
dtb113ek.pdf
DTB113EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueOUT VCC-50VIN IC(MAX.)-500mAGND R11kWDTB113EK R21kW SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors, R1 = R2 = 1kW.2) Built-in bias resistors enable the configuration of an inverter circuit without connecting externa
0.1. Size:175K chenmko
chdtb113ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
7.1. Size:118K nxp
pdtb113e.pdf
PDTB113E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113EK SOT346 SC-59A TO-236 PDTD113EKPDTB113ES[1] SOT54 SC-43A TO-92 PDT
7.2. Size:53K rohm
dtb113es.pdf
DTB113EK / DTB113ES Transistors Digital transistors (built-in resistors) DTB113EK / DTB113ES Feature External dimensions (Unit : mm) 1) Built-in bias resistors enable the +2.9 0.2-DTB113EK1.1+0.2 configuration of an inverter circuit + -0.11.9 0.2-+ without connecting external input 0.8 0.10.95 0.95 - resistors (see equivalent circuit). (1) (2)00.12
7.3. Size:165K diodes
ddtb113eu.pdf
DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom
7.4. Size:163K diodes
ddtb113ec.pdf
DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0
7.5. Size:261K lrc
ldtb113eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB113EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
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