Биполярный транзистор DTB113EK - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTB113EK
Маркировка: F11
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 1 kOhm
Встроенный резистор цепи смещения R2 = 1 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hfe): 33
Корпус транзистора: SC59 SOT346
DTB113EK Datasheet (PDF)
dtb113ek.pdf
DTB113EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueOUT VCC-50VIN IC(MAX.)-500mAGND R11kWDTB113EK R21kW SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors, R1 = R2 = 1kW.2) Built-in bias resistors enable the configuration of an inverter circuit without connecting externa
chdtb113ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
pdtb113e.pdf
PDTB113E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113EK SOT346 SC-59A TO-236 PDTD113EKPDTB113ES[1] SOT54 SC-43A TO-92 PDT
dtb113es.pdf
DTB113EK / DTB113ES Transistors Digital transistors (built-in resistors) DTB113EK / DTB113ES Feature External dimensions (Unit : mm) 1) Built-in bias resistors enable the +2.9 0.2-DTB113EK1.1+0.2 configuration of an inverter circuit + -0.11.9 0.2-+ without connecting external input 0.8 0.10.95 0.95 - resistors (see equivalent circuit). (1) (2)00.12
ddtb113eu.pdf
DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom
ddtb113ec.pdf
DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0
ldtb113eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB113EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 12A02MH-TL-E
History: 12A02MH-TL-E
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050