DTB113ES . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTB113ES
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta: SC72
Búsqueda de reemplazo de transistor bipolar DTB113ES
DTB113ES Datasheet (PDF)
dtb113es.pdf
DTB113EK / DTB113ES Transistors Digital transistors (built-in resistors) DTB113EK / DTB113ES Feature External dimensions (Unit : mm) 1) Built-in bias resistors enable the +2.9 0.2-DTB113EK1.1+0.2 configuration of an inverter circuit + -0.11.9 0.2-+ without connecting external input 0.8 0.10.95 0.95 - resistors (see equivalent circuit). (1) (2)00.12
pdtb113e.pdf
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dtb113ek.pdf
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ddtb113eu.pdf
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chdtb113ekgp.pdf
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Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2SB1216S-H
History: 2SB1216S-H
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