All Transistors. DTB113ES Datasheet

 

DTB113ES Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTB113ES
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 1 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 33
   Noise Figure, dB: -
   Package: SC72

 DTB113ES Transistor Equivalent Substitute - Cross-Reference Search

   

DTB113ES Datasheet (PDF)

 ..1. Size:53K  rohm
dtb113es.pdf

DTB113ES
DTB113ES

DTB113EK / DTB113ES Transistors Digital transistors (built-in resistors) DTB113EK / DTB113ES Feature External dimensions (Unit : mm) 1) Built-in bias resistors enable the +2.9 0.2-DTB113EK1.1+0.2 configuration of an inverter circuit + -0.11.9 0.2-+ without connecting external input 0.8 0.10.95 0.95 - resistors (see equivalent circuit). (1) (2)00.12

 7.1. Size:118K  nxp
pdtb113e.pdf

DTB113ES
DTB113ES

PDTB113E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113EK SOT346 SC-59A TO-236 PDTD113EKPDTB113ES[1] SOT54 SC-43A TO-92 PDT

 7.2. Size:311K  rohm
dtb113ek.pdf

DTB113ES
DTB113ES

DTB113EKDatasheetPNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline SMT3Parameter ValueOUT VCC-50VIN IC(MAX.)-500mAGND R11kWDTB113EK R21kW SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors, R1 = R2 = 1kW.2) Built-in bias resistors enable the configuration of an inverter circuit without connecting externa

 7.3. Size:165K  diodes
ddtb113eu.pdf

DTB113ES
DTB113ES

DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 "Green" Device (Note 3 and 4) B CC 2.00 2.20 Mechanical Data D 0.65 Nom

 7.4. Size:163K  diodes
ddtb113ec.pdf

DTB113ES
DTB113ES

DDTB (xxxx) C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-23 Built-In Biasing Resistors, R1, R2 Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEWB C"Green" Device (Notes 2 and 3) A 0

 7.5. Size:261K  lrc
ldtb113eet1g.pdf

DTB113ES
DTB113ES

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTB113EET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

 7.6. Size:175K  chenmko
chdtb113ekgp.pdf

DTB113ES
DTB113ES

CHENMKO ENTERPRISE CO.,LTDCHDTB113EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 500 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3675 | 2SC1051L

 

 
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