DTC114ESA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC114ESA

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 10 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO92S

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DTC114ESA datasheet

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DTC114ESA

DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ

 ..2. Size:464K  wietron
dtc114esa.pdf pdf_icon

DTC114ESA

DTC114ESA NPN DIGITAL TRANSISTOR P b Lead(Pb)-Free Features 1 2 3 without connecting external input resistors(see equivalent circuit). (1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Output curre

 6.1. Size:57K  motorola
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DTC114ESA

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe

 6.2. Size:57K  philips
pdtc114es 3.pdf pdf_icon

DTC114ESA

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe

Otros transistores... DTB143ES, DTC113ZKA, DTC113ZSA, DTC113ZUA, DTC114ECA, DTC115TN3, DTC114EK, DTC114EKA, TIP42C, DTC114EUA, DTC114GKA, DTC114GSA, DTC114GUA, DTC114TCA, DTC115TM3T5G, DTC114TKA, DTC114TSA