All Transistors. DTC114ESA Datasheet

 

DTC114ESA Datasheet and Replacement


   Type Designator: DTC114ESA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO92S
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DTC114ESA Datasheet (PDF)

 ..1. Size:426K  secos
dtc114eca dtc114esa dtc114eua.pdf pdf_icon

DTC114ESA

DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ

 ..2. Size:464K  wietron
dtc114esa.pdf pdf_icon

DTC114ESA

DTC114ESANPN DIGITAL TRANSISTORP b Lead(Pb)-FreeFeatures:1 2 3 without connecting external input resistors(see equivalent circuit).(1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy.Absolute maximum ratings(Ta=25)Parameter Symbol Value UnitSupply voltage VCC 50 VInput voltage VIN -10 ~ 40 VIO 50Output curre

 6.1. Size:57K  motorola
pdtc114es 3.pdf pdf_icon

DTC114ESA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe

 6.2. Size:57K  philips
pdtc114es 3.pdf pdf_icon

DTC114ESA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CTP1732 | KTC814U | 2SC3489 | DTA114TMFHA | RT2P01M | CP502 | 2SD1907R

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