DTC114ESA Datasheet. Specs and Replacement
Type Designator: DTC114ESA
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92S
DTC114ESA Substitution
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DTC114ESA datasheet
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DTC114ESA NPN DIGITAL TRANSISTOR P b Lead(Pb)-Free Features 1 2 3 without connecting external input resistors(see equivalent circuit). (1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy. Absolute maximum ratings(Ta=25 ) Parameter Symbol Value Unit Supply voltage VCC 50 V Input voltage VIN -10 40 V IO 50 Output curre... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit design handbook, halfpage 2 Reduces numbe... See More ⇒
Detailed specifications: DTB143ES, DTC113ZKA, DTC113ZSA, DTC113ZUA, DTC114ECA, DTC115TN3, DTC114EK, DTC114EKA, TIP42C, DTC114EUA, DTC114GKA, DTC114GSA, DTC114GUA, DTC114TCA, DTC115TM3T5G, DTC114TKA, DTC114TSA
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