DTC114ESA Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC114ESA
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92S
DTC114ESA Transistor Equivalent Substitute - Cross-Reference Search
DTC114ESA Datasheet (PDF)
dtc114eca dtc114esa dtc114eua.pdf
DTC114EE / DTC114EUA DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES DTC114EE (SOT-523) DTC114EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equ
dtc114esa.pdf
DTC114ESANPN DIGITAL TRANSISTORP b Lead(Pb)-FreeFeatures:1 2 3 without connecting external input resistors(see equivalent circuit).(1)GND (2)OUT (3)IN to allow negative biasing of the input.They also have the advantage device design easy.Absolute maximum ratings(Ta=25)Parameter Symbol Value UnitSupply voltage VCC 50 VInput voltage VIN -10 ~ 40 VIO 50Output curre
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
pdtc114es 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe
dtc114eseria 8a-m sot416.pdf
DTC114EET1 SERIESBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba
dtc114es3.pdf
Spec. No. : C351S3 Issued Date : 2002.06.01 CYStech Electronics Corp.Revised Date : 2010.11.10 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC114ES3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
