EMB3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit : mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB31.60.5package. 1.00.5 0.52) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 1pin mark ( ) ( ) ( )1 2 33) Transistor elements are indep

EMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors. (3) (2)

EMB3 DIGITAL TRANSISTOR (PNP+ PNP)SOT-563 FEATURES Two DTA143T chips in a package Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING: B3 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO -50 VCollector-emitter voltage V(BR)CEO -50 VEmit

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PEMB3PNP resistor-equipped doubletransistor R1 = 4.7 k, R2 = openPreliminary specification 2001 Sep 14Philips Semiconductors Preliminary specificationPNP resistor-equipped double transistorPEMB3R1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6

PEMB30; PUMB30PNP/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packagesTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB30 SOT666

EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

CHENMKO ENTERPRISE CO.,LTDCHEMB3GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil