EMB3 Datasheet. Specs and Replacement

Type Designator: EMB3

SMD Transistor Code: B3

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-107C

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EMB3 datasheet

 ..1. Size:64K  rohm

emb3 umb3n imb3a umb3n.pdf pdf_icon

EMB3

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB3 1.6 0.5 package. 1.0 0.5 0.5 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 1pin mark ( ) ( ) ( ) 1 2 3 3) Transistor elements are indep... See More ⇒

 ..2. Size:504K  rohm

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EMB3

EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 4.7kW EMB3 UMB3N (SC-107C) SOT-353 (SC-88) SMT6 (4) (5) lFeatures (6) 1) Built-In Biasing Resistors. (3) (2)... See More ⇒

 ..3. Size:546K  htsemi

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EMB3

EMB3 DIGITAL TRANSISTOR (PNP+ PNP) SOT-563 FEATURES Two DTA143T chips in a package Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING B3 Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO -50 V Collector-emitter voltage V(BR)CEO -50 V Emit... See More ⇒

 0.1. Size:49K  philips

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EMB3

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 k , R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor PEMB3 R1 = 4.7 k , R2 = open FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 ... See More ⇒

Detailed specifications: EMB52, DTC314TK, EMB53, DTC314TS, EMB3FHA, EMB4, EMB4FHA, DTC343TK, 2N3906, DTC343TS, EMB2FHA, DTC363EK, DTC363EU, DTD113EK, DTD113ES, DTD114EK, DTD114ES

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