EMB3 Datasheet, Equivalent, Cross Reference Search
Type Designator: EMB3
SMD Transistor Code: B3
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-107C
EMB3 Transistor Equivalent Substitute - Cross-Reference Search
EMB3 Datasheet (PDF)
emb3 umb3n imb3a umb3n.pdf
EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit : mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB31.60.5package. 1.00.5 0.52) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 1pin mark ( ) ( ) ( )1 2 33) Transistor elements are indep
emb3.pdf
EMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N (SC-107C) SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors. (3) (2)
emb3.pdf
EMB3 DIGITAL TRANSISTOR (PNP+ PNP)SOT-563 FEATURES Two DTA143T chips in a package Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING: B3 Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollector-base voltage V(BR)CBO -50 VCollector-emitter voltage V(BR)CEO -50 VEmit
pemb3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D744PEMB3PNP resistor-equipped doubletransistor R1 = 4.7 k, R2 = openPreliminary specification 2001 Sep 14Philips Semiconductors Preliminary specificationPNP resistor-equipped double transistorPEMB3R1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6
pemb30 pumb30.pdf
PEMB30; PUMB30PNP/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packagesTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB30 SOT666
emb3fha umb3nfha imb3afra.pdf
EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)
emb3fha.pdf
EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)
chemb3gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMB3GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB224
