1402 Todos los transistores

MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS PRELIMINARY DATA .REFRACTORY/GOLD METALLIZATION .HIGH GAIN & COLLECTOR EFFICIENCY .RUGGED OVERLAY GEOMETRY .METAL/CERAMIC HERMETIC PACKAGE .P 2.0 W MIN. WITH 10.0 dB GAIN = OUT .250 2LFL (S010) hermetically sealed ORDER CODE BRANDING MSC81402 81402 PIN CONNECTION DESCRIPTION The MSC81402 is a 28 Volt, C

RN1401 RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir

Ordering number EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1402/2SC3596] Wide-band amp. Features High fT fT typ=700MHz. Small reverse transfer capacit

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name

Si1402DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.077 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET 2.5 V Rated 30 0.120 at VGS = 2.5 V 2.5 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applications SOT-363 SC-70 (6-LEA

PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity PTFB241402F ceramic package. It is designed for cellular amplifier applications in Package H-37248-4 the 2300 to 2400 MHz frequency band. Manufactured with Infineon s advanced LDMO

Ordering number ENA2303A PCP1402 Power MOSFET http //onsemi.com 250V, 2.4 , 1.2A, Single N-Channel Features On-resistance RDS(on)=1.8 (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 250 V Gate to Source Voltage VG

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto

GOFORD 1402TR N-Channel MOSFETS DESCRIPTION VDSS RDS(ON) ID The OGFD 1402TR uses advanced trench technology and design to provide excellent R DS(ON) 40V

P1402CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 4.5V 20V 45A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 12 V TC = 25 C 45 ID Continuous Drain Current TC = 100 C 19 A IDM 140 Pulsed Drain Current1 IAS Avalanche Current 33

SM1402NSS N-Channel Enhancement Mode MOSFET Features Pin Description 60V/0.4A, D RDS(ON)= 2.2 (max.) @ VGS=10V S RDS(ON)= 2.6 (max.) @ VGS=4.5V G ESD Protection Top View of SC-70 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) G Applications High Speed Switching. Analog Switching Application. S N-Channel MOSFET Ordering and Ma

Preliminary Subject to Change without Notice MDU1402 Single N-channel Trench MOSFET 25V General Description Features The MDU1402 uses advanced MagnaChip s MOSFET V = 25V DS Technology, which provides high performance in on-state I = 66A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDU1402 is suitable device for DC/DC

Single N-channel MOSFET ELM51402FA-S General description Features ELM51402FA-S uses advanced trench technology to Vds=20V provide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)

SENSITRON SHD226408 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 472, REV A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION 1000 VOLT, 3.8 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 3.9 Amps CONTINUOUS DRAIN CURRENT @ TC

P1402CDG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL

VBQA1402 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET 40 38 nC 0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS Tested APPLICATIONS Synchronous Rectification Secondary Side DC/DC

VBM1402 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0024 at VGS = 10 V 180 COMPLIANT 40 120 nC 0.0035 at VGS = 6.5 V 150 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT

isc Silicon NPN Power Transistor 2SD1402 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C

isc N-Channel MOSFET Transistor 2SK1402A DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

isc N-Channel MOSFET Transistor 2SK1402 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra