MSC81402RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIERS APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.HIGH GAIN & COLLECTOR EFFICIENCY.RUGGED OVERLAY GEOMETRY.METAL/CERAMIC HERMETIC PACKAGE.P 2.0 W MIN. WITH 10.0 dB GAIN=OUT.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC81402 81402PIN CONNECTIONDESCRIPTIONThe MSC81402 is a 28 Volt, C

RN1401RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2401 to RN2406 Equivalent Cir

Ordering number:EN1761BPNP/NPN Epitaxial Planar Silicon Transistors2SA1402/2SC3596Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1402/2SC3596] Wide-band amp.Features High fT: fT typ=700MHz. Small reverse transfer capacit

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name:

Si1402DHVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.077 at VGS = 4.5 V 3.4 TrenchFET Power MOSFET: 2.5 V Rated 300.120 at VGS = 2.5 V 2.5 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable ApplicationsSOT-363SC-70 (6-LEA

PTFB241402F Confidential, Limited Internal DistributionHigh Power RF LDMOS Field Effect Transistor140 W, 2300 2400 MHzDescriptionThe PTFB241402F integrates two LDMOS FETs into one open-cavity PTFB241402F ceramic package. It is designed for cellular amplifier applications in Package H-37248-4the 2300 to 2400 MHz frequency band. Manufactured with Infineons advanced LDMO

Ordering number : ENA2303A PCP1402 Power MOSFET http://onsemi.com 250V, 2.4, 1.2A, Single N-Channel Features On-resistance RDS(on)=1.8 (typ) Input Capacitance Ciss=210pF (typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 250 V Gate to Source Voltage VG

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

NPN TRIPLE DIFFUSED2SD1402 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto

GOFORD1402TRN-Channel MOSFETSDESCRIPTIONVDSS RDS(ON) IDThe OGFD 1402TR uses advanced trenchtechnology and design to provide excellent RDS(ON)40V

P1402CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 4.5V20V 45ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C45IDContinuous Drain CurrentTC = 100 C19AIDM140Pulsed Drain Current1IASAvalanche Current 33

SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma

Preliminary Subject to Change without Notice MDU1402 Single N-channel Trench MOSFET 25V General Description Features The MDU1402 uses advanced MagnaChips MOSFET V = 25V DSTechnology, which provides high performance in on-state I = 66A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDU1402 is suitable device for DC/DC

Single N-channel MOSFETELM51402FA-SGeneral description Features ELM51402FA-S uses advanced trench technology to Vds=20Vprovide excellent Rds(on), low gate charge and low gate Id=1.0A resistance. Rds(on)

SENSITRON SHD226408 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 472, REV A HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.8 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - Volts 20 ID - - 3.9 Amps CONTINUOUS DRAIN CURRENT @ TC

P1402CDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL

VBQA1402www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET40 38 nC0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Synchronous Rectification Secondary Side DC/DC

VBM1402www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0024 at VGS = 10 V 180COMPLIANT 40 120 nC0.0035 at VGS = 6.5 V 150APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

isc Silicon NPN Power Transistor 2SD1402DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

isc N-Channel MOSFET Transistor 2SK1402ADESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc Silicon PNP Darlington Power Transistor 2SB1402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION With TO-3 package Wide area of safe operation APPLICATIONS For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

isc N-Channel MOSFET Transistor 2SK1402DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra