F105 Todos los transistores

 ..1. Size:885K  fairchild semi
 fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf

QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 0.1. Size:1239K  1
 ipd105n03lg ipf105n03lg ips105n03lg ipu105n03lg.pdf

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 0.2. Size:104K  motorola
 mrf10500 mrf10501.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10500/D The RF Line Microwave Pulse MRF10500 Power Transistors MRF10501 . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 115

 0.3. Size:104K  motorola
 mrf10500.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10500/D The RF Line Microwave Pulse MRF10500 Power Transistors MRF10501 . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK) Gain = 8.5 dB Min, 9.0 dB (Typ) 1025 115

 0.4. Size:182K  macom
 mrf10502.pdf

MRF10502 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 500W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load