F105 Todos los transistores

 

F105 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: F105
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 140 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3
 

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F105 Datasheet (PDF)

 ..1. Size:885K  fairchild semi
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F105

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 0.1. Size:1239K  1
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F105

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 0.2. Size:104K  motorola
mrf10500 mrf10501.pdf pdf_icon

F105

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

 0.3. Size:104K  motorola
mrf10500.pdf pdf_icon

F105

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

Otros transistores... EW721 , EW722 , EW723 , EWQ282 , F101 , F102 , F103 , F104 , 8550 , F106 , F107 , F108 , F109 , F110 , F111 , F112 , F113 .

 

 
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