F105 Datasheet and Replacement

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115

MRF10502 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 500W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load