F105 Datasheet, Equivalent, Cross Reference Search
Type Designator: F105
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
F105 Transistor Equivalent Substitute - Cross-Reference Search
F105 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115
mrf10500.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10500/DThe RF LineMicrowave PulseMRF10500Power TransistorsMRF10501. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK)Gain = 8.5 dB Min, 9.0 dB (Typ)1025115
mrf10502.pdf
MRF10502 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 500W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 500 W peak Gain = 8.5 dB min, 9.0 dB (typ.) 100% tested for load
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