F111 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: F111

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 85 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 7.5 A

Temperatura operativa máxima (Tj): 140 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1.5 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO62

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F111 datasheet

 0.1. Size:874K  silikron
 ssf1116a.pdf pdf_icon

F111

SSF1116A Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

 0.2. Size:1098K  silikron
 ssf1116.pdf pdf_icon

F111

SSF1116 Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

 0.3. Size:1418K  goodark
 sf1116.pdf pdf_icon

F111

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliabi

Otros transistores... F103, F104, F105, F106, F107, F108, F109, F110, 2SC5198, F112, F113, F114, F115, F116, F117, F117A, F118