F111 Specs and Replacement
Type Designator: F111
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO62
F111 Substitution
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F111 datasheet
SSF1116A Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par... See More ⇒
SSF1116 Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param... See More ⇒
SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliabi... See More ⇒
Detailed specifications: F103, F104, F105, F106, F107, F108, F109, F110, 2SC5198, F112, F113, F114, F115, F116, F117, F117A, F118
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