All Transistors. F111 Datasheet

 

F111 Datasheet and Replacement


   Type Designator: F111
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO62
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F111 Datasheet (PDF)

 0.1. Size:874K  silikron
 ssf1116a.pdf pdf_icon

F111

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

 0.2. Size:1098K  silikron
 ssf1116.pdf pdf_icon

F111

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

 0.3. Size:1418K  goodark
 sf1116.pdf pdf_icon

F111

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliabi

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1987 | C8050C | 2SD1376 | 3DA150C | ECG95 | BC583 | R8066

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