All Transistors. F111 Datasheet

 

F111 Datasheet and Replacement


   Type Designator: F111
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 1.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO62
 

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F111 Datasheet (PDF)

 0.1. Size:874K  silikron
 ssf1116a.pdf pdf_icon

F111

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

 0.2. Size:1098K  silikron
 ssf1116.pdf pdf_icon

F111

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

 0.3. Size:1418K  goodark
 sf1116.pdf pdf_icon

F111

SSF1116 110V N-Channel MOSFET FEATURES ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current DESCRIPTION The SSF1116 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliabi

Datasheet: F103 , F104 , F105 , F106 , F107 , F108 , F109 , F110 , 2SC2383Y , F112 , F113 , F114 , F115 , F116 , F117 , F117A , F118 .

History: BC737 | GMO290 | DDTB123YU | BU221 | MPSA42G | BFY69V | BC557B

Keywords - F111 transistor datasheet

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