F115 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F115
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Corriente del colector DC máxima (Ic): 7.5 A
Temperatura operativa máxima (Tj): 140 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO3
Búsqueda de reemplazo de F115
F115 Datasheet (PDF)
mrf1150marev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
mrf1150ma mrf1150mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
Otros transistores... F107 , F108 , F109 , F110 , F111 , F112 , F113 , F114 , 2SD669 , F116 , F117 , F117A , F118 , F118A , F119 , F119A , F120 .
History: KT503E | 40349S | NST3904DP6T5G | 2SB764L | GA53270
History: KT503E | 40349S | NST3904DP6T5G | 2SB764L | GA53270
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