F115
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F115
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Corriente del colector DC máxima (Ic): 7.5
A
Temperatura operativa máxima (Tj): 140
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar F115
F115
Datasheet (PDF)
0.1. Size:128K motorola
mrf1150marev8.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
0.2. Size:104K motorola
mrf1150m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
0.3. Size:128K motorola
mrf1150ma mrf1150mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
0.4. Size:104K motorola
mrf1150ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
0.5. Size:225K panasonic
draf115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF115EDRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
0.6. Size:250K hgsemi
mrf1150mb.pdf
HG RF POWER TRANSISTORMRF1150MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
0.7. Size:255K hgsemi
mrf1150ma.pdf
HG RF POWER TRANSISTORMRF1150MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
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