F115 Specs and Replacement
Type Designator: F115
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
F115 Substitution
- BJT ⓘ Cross-Reference Search
F115 datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA... See More ⇒
Detailed specifications: F107, F108, F109, F110, F111, F112, F113, F114, TIP2955, F116, F117, F117A, F118, F118A, F119, F119A, F120
Keywords - F115 pdf specs
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