F115 Datasheet, Equivalent, Cross Reference Search
Type Designator: F115
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
F115 Transistor Equivalent Substitute - Cross-Reference Search
F115 Datasheet (PDF)
mrf1150marev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
mrf1150ma mrf1150mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
draf115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAF115ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF115EDRA3115E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePacka
mrf1150mb.pdf
HG RF POWER TRANSISTORMRF1150MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
mrf1150ma.pdf
HG RF POWER TRANSISTORMRF1150MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DD104E
