FC110 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FC110
Código: 110
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de FC110
FC110 Datasheet (PDF)
fc110.pdf

Ordering number:EN3078FC110NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC110]ing efficiency greatly. The FC110 is formed with two chips, being equiva-
ixfc110n10p.pdf

IXFC 110N10P VDSS = 100 VPolarHVTM HiPerFETID25 = 60 APower MOSFET RDS(on) 17 m ISOPLUS220TMtrr 150 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 175 C 100 VVDGR TJ
Otros transistores... FBC738 , FBN36485 , FC100M , FC105 , FC106 , FC107 , FC108 , FC109 , 13003 , FC111 , FC112 , FC113 , FC114 , FC115 , FC116 , FC119 , FC120 .
History: 45194 | KSC1393R | KST5086 | UN4115Q | 2SC4360 | DTS431
History: 45194 | KSC1393R | KST5086 | UN4115Q | 2SC4360 | DTS431



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