FC110 Specs and Replacement

Type Designator: FC110

SMD Transistor Code: 110

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT223

 FC110 Substitution

- BJT ⓘ Cross-Reference Search

 

FC110 datasheet

 ..1. Size:49K  sanyo

 fc110.pdf pdf_icon

FC110

Ordering number EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions On-chip bias resistors (R1=22k , R2=22k ) unit mm Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC110] ing efficiency greatly. The FC110 is formed with two chips, being equiva-... See More ⇒

 0.1. Size:230K  ixys

 ixfc110n10p.pdf pdf_icon

FC110

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET RDS(on) 17 m ISOPLUS220TM trr 150 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ... See More ⇒

Detailed specifications: FBC738, FBN36485, FC100M, FC105, FC106, FC107, FC108, FC109, 2N3906, FC111, FC112, FC113, FC114, FC115, FC116, FC119, FC120

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