FMMT4400 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMMT4400
Código: 1K_1KZ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar FMMT4400
FMMT4400 Datasheet (PDF)
fmmt4400 fmmt4401.pdf
SOT23 NPN SILICON PLANAR400 FMMT4400GENERAL PURPOSE TRANSISTORS401 FMMT4401ISSUE 4 FEBRUARY 1997 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I
fmmt4402 fmmt4403.pdf
SOT23 PNP SILICON PLANAR402 FMMT4402GENERAL PURPOSE TRANSISTOR403 FMMT4403ISSUE 2 - MARCH 1995 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V
fmmt449.pdf
FMMT449CEB SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FMMT449 Units30 VVCEO Collector-Emitter Voltage50 VVCBO Collector-Base Voltage5 VVEBO
fmmt449.pdf
SOT23 NPN SILICON PLANAR49 FMMT449MEDIUM POWER TRANSISTORISSUE 3 - NOVEMBER 1995 T i I i RCE(sat) 250m at 1AEC T T T T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I I V I II i V
fmmt449.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEO
fmmt449.pdf
FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 1 A CPC Collector Power Dissipation 200
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BSS72S
History: BSS72S
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