FMMT4400 Datasheet, Equivalent, Cross Reference Search
Type Designator: FMMT4400
SMD Transistor Code: 1K_1KZ
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
FMMT4400 Transistor Equivalent Substitute - Cross-Reference Search
FMMT4400 Datasheet (PDF)
fmmt4400 fmmt4401.pdf
SOT23 NPN SILICON PLANAR400 FMMT4400GENERAL PURPOSE TRANSISTORS401 FMMT4401ISSUE 4 FEBRUARY 1997 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I
fmmt4402 fmmt4403.pdf
SOT23 PNP SILICON PLANAR402 FMMT4402GENERAL PURPOSE TRANSISTOR403 FMMT4403ISSUE 2 - MARCH 1995 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V
fmmt449.pdf
FMMT449CEB SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FMMT449 Units30 VVCEO Collector-Emitter Voltage50 VVCBO Collector-Base Voltage5 VVEBO
fmmt449.pdf
SOT23 NPN SILICON PLANAR49 FMMT449MEDIUM POWER TRANSISTORISSUE 3 - NOVEMBER 1995 T i I i RCE(sat) 250m at 1AEC T T T T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I I V I II i V
fmmt449.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEO
fmmt449.pdf
FMMT449 TRANSISTOR (NPN) SOT23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO3. COLLECTOR V Collector-Emitter Voltage 30 V CEOV Emitter-Base Voltage 5 V EBOI Collector Current 1 A CPC Collector Power Dissipation 200
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BC817-16LT1
