FPC1318 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FPC1318
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar FPC1318

FPC1318 Datasheet (PDF)

9.1. Size:509K jiaensemi
jfpc13n65ci.pdf

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

9.2. Size:923K jiaensemi
jfpc13n65c jffc13n65c.pdf

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

9.3. Size:507K jiaensemi
jfpc13n60ci.pdf

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

9.4. Size:692K jiaensemi
jfpc13n50c jffm13n50c.pdf

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: KSB1116L

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050