FPC1318. Аналоги и основные параметры

Наименование производителя: FPC1318

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.4 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 175 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 200 MHz

Ёмкость коллекторного перехода (Cc): 15 pf

Статический коэффициент передачи тока (hFE): 160

Корпус транзистора: TO92

 Аналоги (замена) для FPC1318

- подборⓘ биполярного транзистора по параметрам

 

FPC1318 даташит

 9.1. Size:509K  jiaensemi
 jfpc13n65ci.pdf pdf_icon

FPC1318

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.2. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

FPC1318

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 9.3. Size:507K  jiaensemi
 jfpc13n60ci.pdf pdf_icon

FPC1318

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.4. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf pdf_icon

FPC1318

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: FP57104, FP57204, FPA683, FPA684, FPA719, FPA720, FPA733, FPC1317, 2N3904, FPC1383, FPC1384, FPC1675, FPC644, FPC828, FPC828A, FPC829, FPC900