FPC1383 Todos los transistores

 

FPC1383 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FPC1383

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: TO92

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FPC1383 datasheet

 9.1. Size:509K  jiaensemi
 jfpc13n65ci.pdf pdf_icon

FPC1383

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.2. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

FPC1383

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 9.3. Size:507K  jiaensemi
 jfpc13n60ci.pdf pdf_icon

FPC1383

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.4. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf pdf_icon

FPC1383

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

MOSTRAR MÁS

Otros transistores... FP57204 , FPA683 , FPA684 , FPA719 , FPA720 , FPA733 , FPC1317 , FPC1318 , 2N2222 , FPC1384 , FPC1675 , FPC644 , FPC828 , FPC828A , FPC829 , FPC900 , FPC929 .

 

 

 


 
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