Справочник транзисторов. FPC1383

 

Биполярный транзистор FPC1383 Даташит. Аналоги


   Наименование производителя: FPC1383
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Ёмкость коллекторного перехода (Cc): 20 pf
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: TO92
 

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FPC1383 Datasheet (PDF)

 9.1. Size:509K  jiaensemi
 jfpc13n65ci.pdf pdf_icon

FPC1383

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.2. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

FPC1383

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 9.3. Size:507K  jiaensemi
 jfpc13n60ci.pdf pdf_icon

FPC1383

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.4. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf pdf_icon

FPC1383

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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Другие транзисторы... FP57204 , FPA683 , FPA684 , FPA719 , FPA720 , FPA733 , FPC1317 , FPC1318 , C1815 , FPC1384 , FPC1675 , FPC644 , FPC828 , FPC828A , FPC829 , FPC900 , FPC929 .

History: BCW95A | DSS4140V | 2SC5137 | 2SC3502C | OC480

 

 
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