FPC1383 Specs and Replacement

Type Designator: FPC1383

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO92

 FPC1383 Substitution

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FPC1383 datasheet

 9.1. Size:509K  jiaensemi

 jfpc13n65ci.pdf pdf_icon

FPC1383

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs... See More ⇒

 9.2. Size:923K  jiaensemi

 jfpc13n65c jffc13n65c.pdf pdf_icon

FPC1383

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan... See More ⇒

 9.3. Size:507K  jiaensemi

 jfpc13n60ci.pdf pdf_icon

FPC1383

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs... See More ⇒

 9.4. Size:692K  jiaensemi

 jfpc13n50c jffm13n50c.pdf pdf_icon

FPC1383

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc... See More ⇒

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Detailed specifications: FP57204, FPA683, FPA684, FPA719, FPA720, FPA733, FPC1317, FPC1318, 2N2222, FPC1384, FPC1675, FPC644, FPC828, FPC828A, FPC829, FPC900, FPC929

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