FT1341 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FT1341

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 480 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO18

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FT1341 datasheet

 0.1. Size:486K  sanyo
 sft1341.pdf pdf_icon

FT1341

SFT1341 Ordering number ENA1444 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1341 Applications Features 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --10 A Drain Current (P

 9.1. Size:491K  sanyo
 sft1342.pdf pdf_icon

FT1341

SFT1342 Ordering number ENA1559 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1342 Applications Features Motor drive application. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)

 9.2. Size:358K  sanyo
 sft1345.pdf pdf_icon

FT1341

SFT1345 Ordering number EN8987 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1345 Applications Features ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

 9.3. Size:354K  onsemi
 sft1342.pdf pdf_icon

FT1341

Ordering number ENA1559B SFT1342 Power MOSFET http //onsemi.com 60V, 62m , 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1 Specifications Absolute Maximum Ratings at Ta = 25 C 3 Parameter Symbol Value Unit V

MOSTRAR MÁS

Otros transistores... FT118, FT1210, FT123, FT1310, FT1315, FT1324, FT1324B, FT1324C, D882P, FT1551, FT1607R, FT1608R, FT17, FT1702, FT1717AR, FT1717R, FT1718