FT1341 Datasheet, Equivalent, Cross Reference Search
Type Designator: FT1341
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 480 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
FT1341 Transistor Equivalent Substitute - Cross-Reference Search
FT1341 Datasheet (PDF)
sft1341.pdf
SFT1341Ordering number : ENA1444SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1341ApplicationsFeatures 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --10 ADrain Current (P
sft1342.pdf
SFT1342Ordering number : ENA1559SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1342ApplicationsFeatures Motor drive application. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
sft1345.pdf
SFT1345Ordering number : EN8987SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1345ApplicationsFeatures ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-
sft1342.pdf
Ordering number : ENA1559B SFT1342 Power MOSFET http://onsemi.com 60V, 62m, 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C 3Parameter Symbol Value UnitV
sft1345.pdf
SFT1345 Power MOSFET 100V, 275m, 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductors www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Ma
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
