FT3055 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FT3055

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.2 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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FT3055 datasheet

 0.1. Size:224K  motorola
 mmft3055v .pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055V/D Designer's Data Sheet MMFT3055V TMOS V SOT-223 for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on resis- 1.7 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than d

 0.2. Size:236K  motorola
 mmft3055el.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055EL/D Medium Power Field Effect Transistor MMFT3055EL N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS power MOSFET designed to LOGIC LEVEL TMOS FET withstand high energy in the avalanche and commutation modes.

 0.3. Size:224K  motorola
 mmft3055vl.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055VL/D Designer's Data Sheet MMFT3055VL TMOS V SOT-223 for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on resis- 1.5 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than

 0.4. Size:238K  motorola
 mmft3055e.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055E/D Medium Power Field Effect Transistor MMFT3055E N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET TMOS FET designed to withstand high energy in the avalanche and commuta- 1.7 AMP tion m

MOSTRAR MÁS

Otros transistores... FT2384, FT2551, FT2955, FT2974, FT2975, FT2978, FT2979, FT2995, 13007, FT317, FT317A, FT317B, FT34A, FT34B, FT34C, FT34D, FT3567