Биполярный транзистор FT3055 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: FT3055
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 117 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
FT3055 Datasheet (PDF)
mmft3055v .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DDesigner's Data SheetMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than d
mmft3055el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055EL/DMedium Power Field Effect TransistorMMFT3055ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS power MOSFET designed toLOGIC LEVEL TMOS FETwithstand high energy in the avalanche and commutation modes.
mmft3055vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055VL/DDesigner's Data SheetMMFT3055VLTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than
mmft3055e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055E/DMedium Power Field Effect TransistorMMFT3055ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1.7 AMPtion m
mmft3055v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DProduct PreviewMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles th
rft3055le.pdf
RFT3055LEData Sheet August 1999 File Number 4537.32.0A, 60V, 0.150 Ohm, N-Channel, Logic FeaturesLevel, ESD Rated, Power MOSFET 2.0A, 60VThis product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses 2kV ESD Protectedfeature sizes approaching those of LSI circuits, givesoptimum utilization of silicon, res
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: JE9113B | 2N4425
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050