MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DDesigner's Data SheetMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than d

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055EL/DMedium Power Field Effect TransistorMMFT3055ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS power MOSFET designed toLOGIC LEVEL TMOS FETwithstand high energy in the avalanche and commutation modes.

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055VL/DDesigner's Data SheetMMFT3055VLTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055E/DMedium Power Field Effect TransistorMMFT3055ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1.7 AMPtion m

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DProduct PreviewMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles th

RFT3055LEData Sheet August 1999 File Number 4537.32.0A, 60V, 0.150 Ohm, N-Channel, Logic FeaturesLevel, ESD Rated, Power MOSFET 2.0A, 60VThis product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses 2kV ESD Protectedfeature sizes approaching those of LSI circuits, givesoptimum utilization of silicon, res