FT3055 Specs and Replacement

Type Designator: FT3055

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 117 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 FT3055 Substitution

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FT3055 datasheet

 0.1. Size:224K  motorola

 mmft3055v .pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055V/D Designer's Data Sheet MMFT3055V TMOS V SOT-223 for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on resis- 1.7 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than d... See More ⇒

 0.2. Size:236K  motorola

 mmft3055el.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055EL/D Medium Power Field Effect Transistor MMFT3055EL N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS power MOSFET designed to LOGIC LEVEL TMOS FET withstand high energy in the avalanche and commutation modes.... See More ⇒

 0.3. Size:224K  motorola

 mmft3055vl.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055VL/D Designer's Data Sheet MMFT3055VL TMOS V SOT-223 for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET TM TMOS V is a new technology designed to achieve an on resis- 1.5 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new technology more than... See More ⇒

 0.4. Size:238K  motorola

 mmft3055e.pdf pdf_icon

FT3055

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMFT3055E/D Medium Power Field Effect Transistor MMFT3055E N Channel Enhancement Mode Motorola Preferred Device Silicon Gate TMOS E FETt SOT 223 for Surface Mount MEDIUM POWER This advanced E FET is a TMOS Medium Power MOSFET TMOS FET designed to withstand high energy in the avalanche and commuta- 1.7 AMP tion m... See More ⇒

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Detailed specifications: FT2384, FT2551, FT2955, FT2974, FT2975, FT2978, FT2979, FT2995, 13007, FT317, FT317A, FT317B, FT34A, FT34B, FT34C, FT34D, FT3567

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