FT3055 Datasheet, Equivalent, Cross Reference Search
Type Designator: FT3055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
FT3055 Transistor Equivalent Substitute - Cross-Reference Search
FT3055 Datasheet (PDF)
mmft3055v .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DDesigner's Data SheetMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than d
mmft3055el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055EL/DMedium Power Field Effect TransistorMMFT3055ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS power MOSFET designed toLOGIC LEVEL TMOS FETwithstand high energy in the avalanche and commutation modes.
mmft3055vl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055VL/DDesigner's Data SheetMMFT3055VLTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than
mmft3055e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055E/DMedium Power Field Effect TransistorMMFT3055ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1.7 AMPtion m
mmft3055v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DProduct PreviewMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles th
rft3055le.pdf
RFT3055LEData Sheet August 1999 File Number 4537.32.0A, 60V, 0.150 Ohm, N-Channel, Logic FeaturesLevel, ESD Rated, Power MOSFET 2.0A, 60VThis product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses 2kV ESD Protectedfeature sizes approaching those of LSI circuits, givesoptimum utilization of silicon, res
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KRA308V
