All Transistors. FT3055 Datasheet

 

FT3055 Datasheet and Replacement


   Type Designator: FT3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

 FT3055 Substitution

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FT3055 Datasheet (PDF)

 0.1. Size:224K  motorola
mmft3055v .pdf pdf_icon

FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DDesigner's Data SheetMMFT3055VTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.7 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than d

 0.2. Size:236K  motorola
mmft3055el.pdf pdf_icon

FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055EL/DMedium Power Field Effect TransistorMMFT3055ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS power MOSFET designed toLOGIC LEVEL TMOS FETwithstand high energy in the avalanche and commutation modes.

 0.3. Size:224K  motorola
mmft3055vl.pdf pdf_icon

FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055VL/DDesigner's Data SheetMMFT3055VLTMOS VSOT-223 for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETTMTMOS V is a new technology designed to achieve an onresis-1.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than

 0.4. Size:238K  motorola
mmft3055e.pdf pdf_icon

FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055E/DMedium Power Field Effect TransistorMMFT3055ENChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETTMOS FETdesigned to withstand high energy in the avalanche and commuta-1.7 AMPtion m

Datasheet: FT2384 , FT2551 , FT2955 , FT2974 , FT2975 , FT2978 , FT2979 , FT2995 , 2N3906 , FT317 , FT317A , FT317B , FT34A , FT34B , FT34C , FT34D , FT3567 .

Keywords - FT3055 transistor datasheet

 FT3055 cross reference
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