All Transistors. FT3055 Datasheet

 

FT3055 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FT3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 FT3055 Transistor Equivalent Substitute - Cross-Reference Search

   

FT3055 Datasheet (PDF)

 0.1. Size:224K  motorola
mmft3055v .pdf

FT3055
FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DDesigner's Data SheetMMFT3055VTMOS VSOT-223 for Surface MountN Channel Enhancement Mode Silicon GateTMOS POWER

 0.2. Size:236K  motorola
mmft3055el.pdf

FT3055
FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055EL/DMedium Power Field Effect TransistorMMFT3055ELN Channel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMO

 0.3. Size:224K  motorola
mmft3055vl.pdf

FT3055
FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055VL/DDesigner's Data SheetMMFT3055VLTMOS VSOT-223 for Surface MountN Channel Enhancement Mode Silicon GateTMOS POW

 0.4. Size:238K  motorola
mmft3055e.pdf

FT3055
FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055E/DMedium Power Field Effect TransistorMMFT3055EN Channel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS

 0.5. Size:91K  motorola
mmft3055v.pdf

FT3055
FT3055

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT3055V/DProduct PreviewMMFT3055VTMOS VSOT-223 for Surface MountN Channel Enhancement Mode Silicon GateTMOS POWER FETT

 0.6. Size:106K  intersil
rft3055le.pdf

FT3055
FT3055

RFT3055LEData Sheet August 1999 File Number 4537.32.0A, 60V, 0.150 Ohm, N-Channel, Logic FeaturesLevel, ESD Rated, Power MOSFET 2.0A, 60VThis product is an N-Channel power MOSFET manufactured rDS(ON) = 0.150using the MegaFET process. This process, which uses 2kV ESD Protectedfeature sizes approaching those of LSI circuits, givesoptimum utilization of silicon, res

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD1246S | ECG123 | ECG224 | 2SD590 | 2SD1835U | 2SB1624 | 2N2219S

 

 
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