GD100 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

GD100 Datasheet (PDF)

0.1. Size:1160K cn hunteck
hgd100n12sl.pdf pdf_icon

HGD100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 102 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification in

0.2. Size:819K cn hunteck
hgd100n12s.pdf pdf_icon

HGD100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-252 8.6 RDS(on),typ m Enhanced Body diode dv/dt capability 102 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed C

0.3. Size:165K cn starpower
gd100hfx65c1s.pdf pdf_icon

GD100HFX65C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD100HFX65C1S 650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6 s short circuit capability

Otros transistores... GC522K , GC525 , GC526 , GC527 , GCN53 , GCN54 , GCN55 , GCN56 , BD333 , GD110 , GD114 , GD115 , GD120 , GD125 , GD130 , GD133 , GD134 .