GD100 Datasheet. Specs and Replacement

Type Designator: GD100  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1.3 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 0.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

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GD100 datasheet

 0.1. Size:1160K  cn hunteck

 hgd100n12sl.pdf pdf_icon

GD100

HGD100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 102 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification in... See More ⇒

 0.2. Size:819K  cn hunteck

 hgd100n12s.pdf pdf_icon

GD100

HGD100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-252 8.6 RDS(on),typ m Enhanced Body diode dv/dt capability 102 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed C... See More ⇒

 0.3. Size:165K  cn starpower

 gd100hfx65c1s.pdf pdf_icon

GD100

GD100HFX65C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD100HFX65C1S 650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6 s short circuit capability ... See More ⇒

Detailed specifications: GC522K, GC525, GC526, GC527, GCN53, GCN54, GCN55, GCN56, BD333, GD110, GD114, GD115, GD120, GD125, GD130, GD133, GD134

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