GD100 Datasheet, Equivalent, Cross Reference Search
Type Designator: GD100
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1.3 A
Max. Operating Junction Temperature (Tj): 90 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3
GD100 Transistor Equivalent Substitute - Cross-Reference Search
GD100 Datasheet (PDF)
hgd100n12sl.pdf
HGD100N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching,Logic level7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness102 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead FreeApplication Synchronous Rectification in
hgd100n12s.pdf
HGD100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-252 8.6RDS(on),typ m Enhanced Body diode dv/dt capability102 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed C
gd100hfx65c1s.pdf
GD100HFX65C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD100HFX65C1S 650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6s short circuit capability
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
