GD110 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GD110
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 1.3 A
   Temperatura operativa máxima (Tj): 90 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.5 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar GD110

GD110 Datasheet (PDF)

0.1. Size:110K onsemi
ntgd1100l.pdf

NTGD1100LPower MOSFET8 V, 3.3 A, Load Switch with Level-Shift,P-Channel, TSOP-6The NTGD1100L integrates a P and N-Channel MOSFET in asingle package. This device is particularly suited for portableelectronic equipment where low control signals, low battery voltageshttp://onsemi.comand high load currents are needed. The P-Channel device isspecifically designed as a load switch

0.2. Size:972K cn hunteck
hgd110n08al hgi110n08al.pdf

HGD110N08AL , HGI110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

0.3. Size:938K cn hunteck
hgd110n10sl hgi110n10sl.pdf

HGD110N10SL , HGI110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness73 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

0.4. Size:983K cn hunteck
hgd110n08a hgi110n08a.pdf

HGD110N08A , HGI110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

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