GD110 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GD110 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 1.3 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.5 MHz
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO3
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GD110 datasheet
ntgd1100l.pdf
NTGD1100L Power MOSFET 8 V, 3.3 A, Load Switch with Level-Shift, P-Channel, TSOP-6 The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages http //onsemi.com and high load currents are needed. The P-Channel device is specifically designed as a load switch
hgd110n08al hgi110n08al.pdf
HGD110N08AL , HGI110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in
hgd110n08a hgi110n08a.pdf
HGD110N08A , HGI110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit
Otros transistores... GC525, GC526, GC527, GCN53, GCN54, GCN55, GCN56, GD100, BDT88, GD114, GD115, GD120, GD125, GD130, GD133, GD134, GD135
Parámetros del transistor bipolar y su interrelación.
History: 2N3592 | NB211FI | BFV57 | 2N3584X | BC341-6 | BFX85 | T1328
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