2N3738 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3738
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 225 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO66
Búsqueda de reemplazo de 2N3738
2N3738 PDF detailed specifications
2n3738.pdf
2N3738 MECHANICAL DATA POWER TRANSISTORS Dimensions in mm NPN SILICON 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. 1 2 FEATURES Hermetically Packaged. Low Saturation Voltage High Gain 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 Package (TO-213AA) Pin 1 = Base Pin 2 = Emitter Case = Collector A... See More ⇒
2n3735csm4.pdf
2N3735CSM4 Medium Current NPN Silicon Annular Transistors Designed for High-Speed Switching and Driver Applications in a Ceramic Surface Mount Package MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 5.59 0.13 (0.055 0.006) (0.22 0.005) 0.25 0.03 (0.01 0.001) FEATURES 0.23 rad. (0.009) High Voltage 3 2 Ceramic Surface Mount Package 0.23 4 1 min... See More ⇒
2n3734.pdf
2N3734 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 1.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 ... See More ⇒
Otros transistores... 2N3734A , 2N3734S , 2N3735 , 2N3735S , 2N3736 , 2N3736A , 2N3737 , 2N3737A , A733 , 2N3739 , 2N374 , 2N3740 , 2N3740A , 2N3740AR , 2N3741 , 2N3741A , 2N3741R .
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