2N3738 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3738
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 225 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar 2N3738
2N3738 Datasheet (PDF)
2n3738.pdf
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2N3738MECHANICAL DATAPOWER TRANSISTORSDimensions in mmNPN SILICON6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.1 2FEATURES Hermetically Packaged. Low Saturation Voltage High Gain1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Package (TO-213AA)Pin 1 = Base Pin 2 = Emitter Case = CollectorA
2n3735csm4.pdf
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2N3735CSM4Medium Current NPN Silicon AnnularTransistors Designed for High-SpeedSwitching and Driver Applications in aCeramic Surface Mount PackageMECHANICAL DATADimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)FEATURES0.23rad.(0.009) High Voltage3 2 Ceramic Surface Mount Package0.234 1min
2n3734.pdf
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2N3734Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n3735l.pdf
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
2n3737ub.pdf
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN2N3737 2N3737UB JANTXJANTXVJANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol M
2n3737.pdf
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2N3737Silicon NPN TransistorData SheetDescription Applications General purpose Low power Semicoa Semiconductors offers: NPN silicon transistor Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N3737J) JANTX level (2N3737JX) JANTXV level (2N3737JV) JANS level (2N3737JS) QCI to the applicable level 100% die visual
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .